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1、MOS工艺讲解,2023/1/23,silicon substrate,source,drain,gate,oxide,oxide,top oxide,metal connection to source,metal connection to gate,metal connection to drain,polysilicon gate,doped silicon,field oxide,gate oxide,MOS晶体管的立体结构,2023/1/23,2023/1/23,silicon substrate,oxide,photoresist,2023/1/23,Shadow on phot
2、oresist,photoresist,Exposed area of photoresist,Chrome platedglass mask,Ultraviolet Light,silicon substrate,oxide,2023/1/23,2023/1/23,Shadow on photoresist,显影,2023/1/23,腐蚀,2023/1/23,silicon substrate,oxide,oxide,silicon substrate,field oxide,去胶,2023/1/23,2023/1/23,polysilicon,2023/1/23,gate,gate,ult
3、ra-thin gate oxide,polysilicongate,2023/1/23,photoresist,Scanning direction of ion beam,Implanted ions in photoresist to be removed during resist strip.,source,drain,2023/1/23,2023/1/23,自对准工艺,在有源区上覆盖一层薄氧化层淀积多晶硅，用多晶硅栅极版图刻蚀多晶硅以多晶硅栅极图形为掩膜板，刻蚀氧化膜离子注入,2023/1/23,2023/1/23,2023/1/23,2023/1/23,完整的简单MOS晶体管结构
4、,2023/1/23,CMOSFET,P型 si sub,n+,gate,oxide,n+,gate,oxide,oxide,p+,p+,2023/1/23,主要的CMOS工艺,VDD,P阱工艺,N阱工艺,双阱工艺,N-,P+,P+,N+,N+,P+,N+,VSS,VOUT,VIN,VDD,P-,P+,P+,N+,N+,P+,N+,VSS,VOUT,VIN,N-Si,P-Si,N-,I-Si,N+-Si,2023/1/23,掩膜1：P阱光刻,2023/1/23,具体步骤如下：1生长二氧化硅（湿法氧化）：,Si(固体)+2H2O SiO2（固体）+2H2,2023/1/23,氧 化,2023/1
5、/23,2P阱光刻：,涂胶,腌膜对准,曝光,光源,显影,2023/1/23,2023/1/23,硼掺杂（离子注入）,刻蚀（等离子体刻蚀）,去胶,P+,去除氧化膜,3P阱掺杂：,2023/1/23,2023/1/23,2023/1/23,掩膜2：光刻有源区,有源区：nMOS、PMOS 晶体管形成的区域,P-well,P-well,淀积氮化硅 光刻有源区 场区氧化 去除有源区氮化硅及二氧化硅,SiO2隔离岛,2023/1/23,有源区,depositednitride layer,有源区光刻板N型p型MOS制作区域(漏-栅-源),2023/1/23,1.淀积氮化硅：,氧化膜生长（湿法氧化）,涂胶,
6、有源区光刻板,2.光刻有源区：,2023/1/23,氮化硅刻蚀去胶,3.场区氧化：,场区氧化（湿法氧化）,2023/1/23,掩膜3：光刻多晶硅,去除氮化硅薄膜及有源区SiO2,P-well,栅极氧化膜,多晶硅栅极,生长栅极氧化膜 淀积多晶硅 光刻多晶硅,2023/1/23,生长栅极氧化膜,淀积多晶硅,涂胶光刻,多晶硅光刻板,P-well,多晶硅刻蚀,2023/1/23,掩膜4：P+区光刻,1、P+区光刻 2、离子注入B+，栅区有多晶硅做掩蔽，称为硅栅自对准工艺。3、去胶,P-well,P+,N+,N+,P+,N-Si,P-well,2023/1/23,P+,硼离子注入,去胶,2023/1/2
7、3,掩膜5：N+区光刻,1、N+区光刻 2、离子注入P+，栅区有多晶硅做掩蔽，称为硅栅自对准工艺。3、去胶,P-well,P+,N+,N+,P+,N-Si,P-well,P-well,P+,P+,N+,N+,2023/1/23,2023/1/23,掩膜6：光刻接触孔,1、淀积PSG.2、光刻接触孔3、刻蚀接触孔,P-well,P+,N+,N+,P+,N-Si,P-well,磷硅玻璃（PSG),2023/1/23,掩膜6：光刻接触孔,淀积PSG,光刻接触孔,去胶,2023/1/23,2023/1/23,掩膜7：光刻铝线,1、淀积铝.2、光刻铝3、去胶,P-well,P-well,P+,P+,N+,N+,2023/1/23,P-well,P+,P+,N+,N+,场氧,栅极氧化膜,P+区,P-well,N-型硅极板,多晶硅,N+区,2023/1/23,Example:Intel 0.25 micron Process,5 metal layersTi/Al-Cu/Ti/TiNPolysilicon dielectric,2023/1/23,Interconnect Impact on Chip,2023/1/23,掩膜8：刻钝化孔,Circuit,PAD,CHIP,
