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1、,芯片元器件（device）Snapshot 2010-07-23 魏文,Confidential&Proprietary 2009,2,Si&SemiconductorPN junctionMOS introduceMOS Device 特性.MOS 2nd order effect(advanced character),Agenda,Confidential&Proprietary 2009,3,元素周期表,P型掺杂,N型掺杂,Substrate 衬底,Confidential&Proprietary 2009,4,+14,n=1,n=2,n=3,孤立硅原子,2个电子,8个电子,4个电子
2、,s层有2个量子态,p层有6个量子态,1s22s22p63s23p2,Confidential&Proprietary 2009,5,硅原子组成晶体,Confidential&Proprietary 2009,6,N 型-P型 掺杂及其能带示意图,N型掺杂,P型掺杂,Confidential&Proprietary 2009,7,PN junction（depletion layer formation）,1.Definition:no free carrier2.Wd:Na/Nd3.Bais:Forward decrease Wd,Confidential&Proprietary 2009,
3、8,The Conductivity of PN Junction,R,The current is formed by the movement of the majority carriers.,Two types of movements:majority carriers-diffuse movement(扩散运动).minority carriers drift movement（漂移运动).,N 型 掺杂,P 型 掺杂,Confidential&Proprietary 2009,9,The Conductivity of PN Junction,正偏,导通电压,反偏击穿电压,反偏,
4、Reverse Breakdown反向击穿,pn junction characteristic curve(伏安特性曲线),The most important characteristic of PN junction is that it allows current in only one direction.PN结的最重要特性是它的单向导电性。,Confidential&Proprietary 2009,10,Whats MOS,Metal,Oxide,Semi.,Confidential&Proprietary 2009,11,MOS skeleton,Why called sou
5、rce/drain?Can you figure out which side is source/drain in previous slice?Always remember,MOS is four terminal(including Bulk).,Confidential&Proprietary 2009,12,NMos transistor_Channel formation,No Channel,Ids=0,Channel form,Ids flow from D to S,Ids increase with Vds,similar to linear Resistor,Chann
6、el pinch off.Ids independent of Vds andsimilar to current source,Confidential&Proprietary 2009,13,As VDS is increased:,As VGS-VDS Vt the drain end Pinch-Off;At this moment,VDS=VDS,sat saturation voltage=VGS-VtIf VDS VDS,sat operation in“saturation region”;If VDS VDS,sat operation in“triode region”,N
7、Mos how to work(backup),Confidential&Proprietary 2009,14,Transfer/Output,In the linear region the MOSFET behaves as a resistor controlled by VG.In saturation,it behaves as a current generator controlled by VG.,If VGS is VDsat(VGS),the behavior is linear with slope.,Confidential&Proprietary 2009,15,W
8、AT testkey structure and test method_ Vt,Test condition:VTI_N18:VD=0.05V,VS=VB=0V,VG=0V TO 0.8*1.8VMEASURE VTI_N18=VGID=0.1A*(W/L),Test result:VG=0.445V,VTI_NAA18_10_D18,Confidential&Proprietary 2009,16,SCE(short channel effect),What:Short Channel Effect,Vt decrease along with channel Length.Why:S/D
9、 lateral diffuse(0.7 Xj)and depletion extension into channel cause Leff reduce.How:Tox;Nb;Xj;Vsb,Confidential&Proprietary 2009,17,PT(Punch through),Confidential&Proprietary 2009,18,Junction Breakdown,Confidential&Proprietary 2009,19,Body effect,What:Vt increase with Vsouce-VbulkWhy:Vsb increase the
10、S/D depletion layer,which attract more electrons and cause channel inversion layer electron loss,request more Gate effect.How:Tox;Nb;,Confidential&Proprietary 2009,20,What:Gate Induced Drain Leakage,big leakage current in drain side especial when Vg d0.Why:Gate to Drain overlay area generate high field,lead to avalanche multiplication and BTBT.How:Vg;Na;Vd,GIDL,Confidential&Proprietary 2009,21,Leakage,I1:Junction leakI2:sub-threshold leakageI3:OX tunneling currentI4:Gate Hot carries leakageI5:GIDLI6:Punch through,Confidential&Proprietary 2009,22,Thank You!,
