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1、宋晨之 20150202,EBL基本结构与工作原理,EBL=Electron Beam Lithography=电子束光刻,一、电子束曝光系统结构,column,电子源的分类,直热式 W，2700K 热发射电子源 旁热式 LaB6，1800K电子源 热场发射 ZrO/W，1800K 场发射电子源 冷场发射,四种电子源对比,电子源三个关键参数：有效源尺寸，亮度，电子能量分布热发射源能量分布大，聚焦斑束大，产生严重相差。冷场致发射稳定性差，对真空要求高。故EBL系统选用热场致发射源。,旁热式&热场致电子源结构示意图,阳,地,超高电场,阴,阴,阳,EBL中电子源结构示意图,几个牌子的EBL性能参数,
2、二次电子探测器,Detector,Illustrations with different signal sources,Imaging by means of SE2 detector:5mm WDImaging by means of In lens detector:=10mm WD(depending on high voltage setting)Imaging by means of BSE detector:8-10 mm(Optimum of the BS electron detection),Influence of Acceleration Voltage,Influen
3、ce of Beam Current,Influence of Working Distance,二、坐标系的对准,建立坐标系,写场对准,三、曝光,扫描模式,Exposure parameter,Area dose,Line dose,Dot does,Area mode,Line mode,Circle mode,Exposure strategies Used by Raith,四、临近效应,Visualization of Energy Deposition Grid(EDG),高能电子打断PMMA内高分子链示意图,前散射和背散射随PMMA厚度的变化关系,Monte Carlo Simu
4、lations,Energy deposition,Proximity function,trajectories,energy deposition,energy distribution,double Gaussian,Proximity function,proximity function has the same shape as energy distribution with respect to lateral distancesbut:no direct relation between energy and PE!(its just a model),Influence of beam energy on scattering,互利才能共赢！,Thank you！,
