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1、Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#1,Chapter 2Basic MOS Device Physics,Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display
2、.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#2,MOS Device Structure,Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#3,NMOS and
3、 PMOS with Well,Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#4,MOS Symbols,Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slide
4、s prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#5,MOS Channel Formation,Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#6,I/V Character
5、istics,Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#7,I/V Characteristics,Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides
6、 prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#8,I/V Characteristics(cont.),Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#9,I/V Chara
7、cteristics(cont.),Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#10,Operation in Triode Region,Copyright The McGraw-Hill Companies,Inc.Permission required for reproductio
8、n or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#11,Operation in Active(Saturation)Region,Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS
9、 Device PhysicsCh.2#12,Active Region(cont.),Active Region,Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#13,Transconductance,gm,Copyright The McGraw-Hill Companies,Inc.Pe
10、rmission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#14,Triode and Active Region Transition,Active,Active,Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travi
11、s N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#15,Threshold Voltage and Body Effect,Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#16,Threshold Voltage
12、and Body Effect(cont.),Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#17,Channel Length Modulation,L,L,Copyright The McGraw-Hill Companies,Inc.Permission required for rep
13、roduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#18,Channel Length Modulation(cont.),Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic
14、MOS Device PhysicsCh.2#19,Subthreshold Conduction,Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#20,MOS Layout,Copyright The McGraw-Hill Companies,Inc.Permission required
15、 for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#21,Device Capacitances,Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS D
16、evice PhysicsCh.2#22,Layout for Low Capacitance,Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#23,G-S and G-D Capacitance,Copyright The McGraw-Hill Companies,Inc.Permissi
17、on required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#24,MOS Small Signal Models,Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virgin
18、ia.,Basic MOS Device PhysicsCh.2#25,Bulk Transconductance,gmb,Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#26,Gate Resistance,Copyright The McGraw-Hill Companies,Inc.Pe
19、rmission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#27,MOS Small Signal Model with Capacitance,Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.,Basic MOS Device PhysicsCh.2#28,C-V of NMOS,
