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1、薄膜材料的表征方法（一）,ANALYTICAL TECHNOLOGIES OF THIN FILMS（1）谭永胜,Abstract,IntroductionGeneral idea and categoryX-ray diffraction(XRD)X-ray photoelectron spectroscopy(XPS),Introduction,薄膜(thin film)材料是相对于体材料而言的，是人们采用特殊的方法，在体材料的表面沉积或制备的一层性质与体材料性质完全不同的物质层。,Introduction,在各种薄膜制备与使用过程中，普遍关心 以下几个方面：（1）薄膜的厚度测量；（2）薄
2、膜结构和表面形貌的表征；（3）薄膜成分的分析。对于不同用途的功能薄膜材料，还需测量其电学、光学、声学、力学、热学、磁学等性质。,General idea and category,General idea:beam in and beam out。通过探测出射粒子流的强度分布以及qm、E、等参数来分析样品的性质。,General idea and category,A:elastic or inelastic scattering.B:emitted particles from the sample.,General idea and category,General idea and ca
3、tegory,General idea and category,AES(Auger electron spectroscopy)俄歇电子能谱LEED(low energy electron diffraction)低能电子衍射MEED(medium energy electron diffraction)中能电子衍射RHEED(reflection high energy electron diffraction)反射高能电子衍射RBS(Rutherfold backscattering)卢瑟福背散射SEM(scanning electron microscopy)扫描电子显微镜SIMS(s
4、econdary ion mass spectroscopy)二次离子质谱TEM(transmission electron microscopy)透射电镜UPS(ultra-violet photoelectron spectroscopy)紫外光电子谱XRD(x-ray diffraction)X射线衍射XPS(x-ray photoelectron spectroscopy)X射线光电子谱STM(scanning tunnel microscopy)扫描隧道显微镜AFM(atomic force microscopy)原子力显微镜,General idea and category,De
5、pth:elliptical polarizationStructure：XRD、LEED、RHEED、TEMComposition：XPS、UPS、AESSurface topography:SEM、SPMOptics：UV-VisElectricity:Hall、I-V、C-V,X-ray diffraction,The process of X-ray.,X-ray diffraction,X-ray diffraction,布喇格定律：Cu原子线：,X-ray diffraction,对不同的晶体，其晶体结构和原子间距不同，因而晶面间距也不同,X-ray diffraction,右图为
6、晶面指数示意图，对立方晶系：,X-ray diffraction,XRD spectra of KBr powder,X-ray diffraction,XRD spectra of ZnO(002)peak deposited on glass.,2=34.40,according to ZnO(002)peak,X-ray diffraction,The intensity of the peak,X-ray diffraction,Scherrer equation:,The full width at half maximum,X-ray diffraction,The strain
7、and stress along the c-axis:,X-ray diffraction,X-ray diffraction,小结用途：分析晶体结构。原理：Bragg定律。特点：a.可分析晶体取向以及结晶程度。b.空间分辨本领较低。,X-ray photoelectron spectroscopy,Photoelectric effect:Electron Spectroscopy for Chemical Analysis（ESCA）,X-ray photoelectron spectroscopy,A typical spectrum of silver.,X-ray photoele
8、ctron spectroscopy,The intensity of a XPS peak is given by:Relative atomic sensitivity factor S:So the atomic percentages for an unknown element can be calculated by:,X-ray photoelectron spectroscopy,The calculation of the peak intensity.,X-ray photoelectron spectroscopy,The chemical shift.,X-ray photoelectron spectroscopy,小结用途：分析样品化学成分及元素分布。原理：光电效应。特点：a.可探测除H、He以外的所有元素。b.能在不太高的真空度下进行分析。c.可反映相应元素的化合态。,
