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1、COG 制程原理及流程,COG课程导览,一、课程目标:1-1:使学员了解COG制程原理1-2:使学员了解COG制程动作流程1-3:使学员了解COG制程之检验规范1-4:使学员了解COG制程之Defect Mode,二、课程对象:2-1:LCM厂制程与设备工程师2-2:对COG制程有兴趣的同仁,三、授课时数:3-1:COG制程原理及动作流程15 min3-2:COG制程检验规范 10 min3-3:COG制程之Defect Mode 5 min,TFT LCD Process,JI,JBO,S/G,COG,Laser Cut,CellKitting,Test,Assemble,Module,Ce
2、ll,Array,PCB,PCB test,SLC,COG Process,COG: Chip On Glass,Purpose: Bonding Driver with Cell,Key Components: Cell ACF Driver IC (LSI),Cell,Cell,Pad,Bonding area,DriverIC,DriverIC,主要组成: 黏着剂 导电粒子,ACF Introduction,ACF: Anisotropic Conductive Film(异方向性导电膜),目的:垂直方向电气通电水平方向电气绝缘,Type,AC-8601,AC-8623,Thicknes
3、s,23 3 um,23 3 um,Separator thickness,50 um,50 um,Adhesive thickness,15 2 um,15 2 um,Conductive thickness,8 1 um,8 1 um,Width,1.5 0.1 mm,1.5 0.1 mm,Length,100 m,50 m,Particle size,3 1 um,3 1 um,Conductive Particles,44,000 12,500 pcs/mm2,44,000 12,500 pcs/mm2,Connection resistance,5.0 or less,5.0 or
4、less,Insulation resistance,10E8 or more,10E9 or more,Attach parameter,80/ 1MPa / 3s,80/ 1MPa / 3s,Mainbond parameter,190/ 100MPa / 10s,150/ 100MPa / 10s,Expiration time(5 /RT),7 month / 30 days,4.5 month / 10 days,Hitachi ACF,ACF Introduction,ACF Introduction,ACF Introduction,COG Process Flowchart,外
5、观,COG Process Criteria,ACF贴附,IC压痕,IC压著精,TFT/CF玻璃破损 比照Cell Kitting规格线路刮伤 比照Cell Kitting规格,偏光板显示区內可有压、伤,ICIC背部可有裂痕,COG Criteria(外观),Drive IC,COG Criteria (ACF贴附),贴覆标准ACF必须完全覆盖AUL及ALL,贴附精度：100um,COG Criteria (ACF贴附),COG Criteria (压痕 ),COG Criteria (压著精度 ),FC1,IC 异物,FC11,FC12,X-IC 异物,Y-IC 异物,FC2,IC 压痕良,
6、FC21,FC22,X-IC压痕良,Y-IC压痕良,FC3,ACF 贴附良,FC3,COG ACF 贴附良,FC4,IC 对位偏移,FC41,FC42,X-IC 对位良,Y-IC 对位良,FC5,IC 厚均,FC5,IC 厚均,FC6,IC 电遇良,FC61,FC62,X-IC 电遇良,Y-IC 电遇良,FC7,IC 破/刮伤,FC7,IC 破/刮伤,FC8,IC BUMP良,FC81,FC82,X-IC BUMP 良,Y-IC BUMP 良,COG Defect Mode,FC1 IC异物,FC2 IC压痕不良,过短,无压痕,A, B厚均,FC7 IC 破裂/刮伤,FC8 IC Bump不良,END以上资料仅供大家学习参考!,
