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1、1.The EIS provides understanding,Electron transfer,Electron recombination,in the photoanode in DSSCs,2.Nyquist and Bode plots,under the illumination condition measured at an open circuit bias(Voc,the value is listed in Table 1),under the dark condition measured,3.the effective carrier diffusion leng
2、th(Ln),competition,Electron transfer,Electron recombination,(1)Deff is the effective electron diffusion coefficient,(2)is the electron lifetime,the resistance of electron transport in photoanode,The resistance of charge transfer related to recombination,thickness of the TiO2 photoanode,constant of e
3、ffective rate for recombination,The values of these parameters can be estimated from the central arc of Nyquist and Bode plots,electrochemical characteristics,diameter of the middle semicircle of Nyquist plot,radius of the central arc of Nyquist plot measured from devices in the dark condition,the m
4、aximum peak frequency()in bode plots,(2)is the electron lifetime,A mid is a frequency peak in the middle-frequency region of the Bode plots.,B.The shift of the fmid peak from high frequency to low frequency reveals a more rapid electron transport process.,C.the meddle-frequency region(1-100Hz)relate
5、s directly to the electron transfer process in the film photoanode,A.Based on the dark-current shown in Figure S7,the charge recombination rate of device 2 is slightly higher than device 1.,B.The effective carrier diffusion length(Ln)of device 2 is 1.6 times higher than that of device 1,which is con
6、sistent with the higher Jsc of device 2.,C.The adsorption of dye molecules(D9)in device 2(7.9710-8 mol cm-2)is lower than that in device 1(9.9610-8 mol cm-2),the higher photocurrent in device 2 arises from the rGOTiO2 Schottky barrier,which facilitates the charge transfer more efficiently.,等效电路图,2个RC回路串联；电容C由CPE代替；CPE为恒相位元件(constant phase element)；Warburg阻抗。,Rs,0,the semicircle at high frequency was not detected or the sample RGOSnO2(Fig.8,inset),suggesting that the interfacial electron-transfer resistance of this catalyst is signicantly low,probably due to the high conductivity of RGOSnO2.,
