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1、Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor.受主-一种用来在半导体中形成空穴的元素，比方硼、铟和镓。受 主原子必须比半导体元素少一价电子Alignment Precision - Displacement of patterns that occurs d
2、uring the photolithography process.套准精度-在光刻工艺中转移图形的精度。Anisotropic - A process of etching that has very little or no undercut ting各向异性-在蚀刻过程中，只做少量或不做侧向凹刻。Area Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is
3、 the result of stains, fingerprints, water spots, etc. 沾污区域-任何在晶圆片外表的外来粒子或物质。由沾污、手印和 水滴产生的污染。Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse.椭圆方位角-测量入射面和主晶轴之间的角度。Backside - The bottom surface of a silicon wafer. (Note: This term is notpr
4、eferred; instead, use back surface.)反面-晶圆片的底部外表。注：不推荐该术语，建议使用背部外 表Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.底部硅层-在绝缘层下部的晶圆片，是顶部硅层的根底。Bipolar - Transistors that are able to use both holes and electrons as
5、 charge carriers.双极晶体管-能够采用空穴和电子传导电荷的晶体管。Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.绑定晶圆片-两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。Bonding Interface - The area where the bonding of two wafers occurs.绑定面-两个晶圆片结合的接触区。Buried Layer - A path of
6、low resistance for a current moving in a device.Many of these dopants are antimony and arsenic.埋层-为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。Buried Oxide Layer (BOX) - The layer that insulates between the two wafers.氧化埋层(BOX)-在两个晶圆片间的绝缘层。Carrier - Valence holes and conduction electrons that are capable of carrying a
7、 charge through a solid surface in a silicon wafer.载流子-晶圆片中用来传导电流的空穴或电子。Chemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.化学-机械抛光(CMP)-平整和抛光晶圆片的工艺，采用化学移除和 机械抛光两种方式。此工艺在
8、前道工艺中使用。Chuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand.卡盘痕迹-在晶圆片任意外表发现的由机械手、卡盘或托盘造成的 痕迹。Cleavage Plane - A fracture plane that is preferred.解理面-破裂面Crack - A mark found on a wafer that is greater than 0.25 mm in length.裂纹-长度大于0.25毫米
9、的晶圆片外表微痕。Crater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually.微坑-在扩散照明下可见的，晶圆片外表可区分的缺陷。Conductivity (electrical) - A measurement of how easily charge carriers can flow throughout a material.传导性电学方面-一种关于载流子通过物质难易度的测量指标。Conductivity Typ
10、e - The type of charge carriers in a wafer, such as “N-type and “P-type .导电类型-晶圆片中载流子的类型，N型和P型。Contaminant, Particulate (see light point defect)污染微粒参见光点缺陷Contamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer.沾污区域-局部晶圆片区域被颗粒沾污，造成不利特性影响。
11、Contamination Particulate - Particles found on the surface of a silicon wafer.沾污颗粒-晶圆片外表上的颗粒。Crystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuifs electrical performance. 晶体缺陷-局部晶体包含的、会影响电路性能的空隙和层错。Crystal Indices (see Miller indices)晶体指数
12、参见米勒指数Depletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers.耗尽层-晶圆片上的电场区域，此区域排除载流子。Dimple - A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions.外表起伏-在适宜的光线下通过肉眼可以发现的晶圆片外表凹陷。Donor - A c
13、ontaminate that has donated extra “fTee electrons, thus making a wafer “N-Type .施主-可提供“自由电子的搀杂物，使晶圆片呈现为N型。Dopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Tab
14、le of the Elements.搀杂剂-可以为传导过程提供电子或空穴的元素，此元素可以改变 传导特性。晶圆片搀杂剂可以在元素周期表的III和V族元素中发 现。Doping - The process of the donation of an electron or hole to the conduction process by a dopant.掺杂-把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。Edge Chip and Indent - An edge imperfection that is greater than 0.25 mm.芯片边缘和缩进-晶片中不完整的边缘局
15、部超过0.25毫米。Edge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.)边缘排除区域-位于质量保证区和晶圆片外围之间的区域。根据 晶圆片的尺寸不同而有所不同。Edge Exclusion, Nominal (EE) - The distance between the fixed quality area and the periphery
16、 of a wafer.名义上边缘排除(EE)-质量保证区和晶圆片外围之间的距离。Edge Profile - The edges of two bonded wafers that have been shaped either chemically or mechanically.边缘轮廓-通过化学或机械方法连接起来的两个晶圆片边缘。Etch - A process of chemical reactions or physical removal to rid the wafer of excess materials.蚀刻-通过化学反响或物理方法去除晶圆片的多余物质。Fixed Qua
17、lity Area (FQA) - The area that is most central on a wafer surface.质量保证区(FQA)-晶圆片外表中央的大局部。Flat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes.平边-晶圆片圆周上的一个小平面，作为晶向定位的依据。Flat Diameter - The measurement from the center of the flat through the center of the
18、wafer to the opposite edge of the wafer. (Perpendicular to the flat)平口直径-由小平面的中心通过晶圆片中心到对面边缘的直线距离。Four-Point Probe - Test equipment used to test resistivity of wafers. 四探针-测量半导体晶片外表电阻的设备。Furnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers. A constant tempera
19、ture is required for the process.炉管和热处理-温度测量的工艺设备，具有恒定的处理温度。Front Side - The top side of a silicon wafer. (This term is not preferred; use front surface instead.)正面-晶圆片的顶部外表此术语不推荐，建议使用“前部外表Goniometer - An instrument used in measuring angles.角度计-用来测量角度的设备。Gradient, Resistivity (not preferred; see res
20、istivity variation)电阻梯度不推荐使用，参见“电阻变化Groove - A scratch that was not completely polished out.凹槽-没有被完全去除的擦伤。Hand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer for identification purposes.手工印记-为区分不同的晶圆片而手工在反面做出的标记。Haze - A mass concentration of surface imperfections, o
21、ften giving a hazy appearance to the wafer.雾度-晶圆片外表大量的缺陷，常常表现为晶圆片外表呈雾状。Hole - Similar to a positive charge, this is caused by the absence of a valence electron.空穴-和正电荷类似，是由缺少价电子引起的。Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.晶锭-由多晶或单晶形成的圆柱体
22、，晶圆片由此切割而成。Laser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer.激光散射-由晶圆片外表缺陷引起的脉冲信号。Lay - The main direction of surface texture on a wafer.层-晶圆片外表结构的主要方向。Light Point Defect (LPD) (Not preferred; see localized light-scatterer) 光点缺陷(LPD)不推荐使用，参见局部光散射Lithography
23、- The process used to transfer patterns onto wafers. 光刻-从掩膜到圆片转移的过程。Localized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect.局部光散射-晶圆片外表特征，例如小坑或擦伤导致光线散射，也 称为光点缺陷。Lot - Wafers of similar sizes and charact
24、eristics placed together in a shipment.批次-具有相似尺寸和特性的晶圆片一并放置在一个载片器内。Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.多数载流子-一种载流子，在半导体材料中起支配作用的空穴或电 子，例如在N型中是电子。Mechanical Test Wafer - A silicon wafer used for testing
25、purposes.机械测试晶圆片-用于测试的晶圆片。Microroughness - Surface roughness with spacing between the impuritieswith a measurement of less than 100 以m.微粗糙-小于100微米的外表粗糙局部。Miller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal.Miller索指数-三个整数，用于确定某个
26、并行面。这些整数是来自相 同系统的根本向量。Minimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable.最小条件或方向-确定晶圆片是否合格的允许条件。Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type
27、 area.少数载流子-在半导体材料中不起支配作用的移动电荷，在P型中 是电子，在N型中是空穴。Mound - A raised defect on the surface of a wafer measuring more than 0.25 mm.堆垛-晶圆片外表超过0.25毫米的缺陷。Notch - An indent on the edge of a wafer used for orientation purposes.凹槽-晶圆片边缘上用于晶向定位的小凹槽。Orange Peel - A roughened surface that is visible to the unaide
28、d eye. 桔皮-可以用肉眼看到的粗糙外表Orthogonal Misorientation -直角定向误差-Particle - A small piece of material found on a wafer that is not connected with it.颗粒-晶圆片上的细小物质。Particle Counting - Wafers that are used to test tools for particle contamination.颗粒计算-用来测试晶圆片颗粒污染的测试工具。Particulate Contamination - Particles found
29、 on the surface of a wafer.They appear as bright points when a collineated light is shined on the wafer.颗粒污染-晶圆片外表的颗粒。Pit - A non-removable imperfection found on the surface of a wafer. 深坑-一种晶圆片外表无法消除的缺陷。Point Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitia
30、l atom.点缺陷-不纯洁的晶缺陷，例如格子空缺或原子空隙。Preferential Etch -优先蚀刻-Premium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specific
31、ations than the prime wafer.测试晶圆片-影印过程中用于颗粒计算、测量溶解度和检测金属污 染的晶圆片。对于具体应用该晶圆片有严格的要求，但是要比主晶圆 片要求宽松些。Primary Orientation Flat - The longest flat found on the wafer.主定位边-晶圆片上最长的定位边。Process Test Wafer - A wafer that can be used for processes as well as area cleanliness.加工测试晶圆片-用于区域清洁过程中的晶圆片。Profilometer -
32、A tool that is used for measuring surface topography. 外表形貌剂-一种用来测量晶圆片外表形貌的工具。Resistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material.电阻率电学方面-材料对抗或对抗电荷在其中通过的一种物理 特性。Required - The minimum specifications needed by the customer when ordering wafers.必
33、需-订购晶圆片时客户必须到达的最小规格。Roughness - The texture found on the surface of the wafer that is spaced very closely together.粗糙度-晶圆片外表间隙很小的纹理。Saw Marks - Surface irregularities锯痕-外表不规那么。Scan Direction - In the flatness calculation, the direction of the subsites.扫描方向-平整度测量中，局部平面的方向。Scanner Site Flatness -局部平整度
34、扫描仪-Scratch - A mark that is found on the wafer surface.擦伤-晶圆片外表的痕迹。Secondary Flat - A flat that is smaller than the primary orientation flat.The position of this flat determines what type the wafer is, and also the orientation of the wafer.第二定位边-比主定位边小的定位边，它的位置决定了晶圆片的类 型和晶向。Shape -形状-Site - An area
35、 on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape)局部外表-晶圆片前面上平行或垂直于主定位边方向的区域。Site Array - a neighboring set of sites局部外表系列-一系列的相关局部外表。Site Flatness -局部平整-Slip - A defect pattern of small ridges found on th
36、e surface of the wafer. 划伤-晶圆片外表上的小皱造成的缺陷。Smudge - A defect or contamination found on the wafer caused by fingerprints.污迹-晶圆片上指纹造成的缺陷或污染。Sori -Striation - Defects or contaminations found in the shape of a helix.条痕-螺纹上的缺陷或污染。Subsite, of a Site - An area found within the site, also rectangular. The ce
37、nter of the subsite must be located within the original site.局部子外表-局部外表内的区域，也是矩形的。子站中心必须位于 原始站点内部。Surface Texture - Variations found on the real surface of the wafer that deviate from the reference surface.外表纹理-晶圆片实际面与参考面的差异情况。Test Wafer - A silicon wafer that is used in manufacturing for monitoring
38、 and testing purposes.测试晶圆片-用于生产中监测和测试的晶圆片。Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer.顶部硅膜厚度-顶部硅层外表和氧化层外表间的距离。Top Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top
39、of the insulating layer.顶部硅膜-生产半导体电路的硅层，位于绝缘层顶部。Total Indicator Reading (TIR) - The smallest distance between planes on the surface of the wafer.总计指示剂数(TIR)-晶圆片外表位面间的最短距离。Virgin Test Wafer - A wafer that has not been used in manufacturing or other processes.原始测试晶圆片-还没有用于生产或其他流程中的晶圆片。Void - The lack of any sort of bond (particularly a chemical bond) at the site of bonding.无效-在应该绑定的地方没有绑定特别是化学绑定。Waves - Curves and contours found on the surface of the wafer that can be seen by the naked eye.波浪-晶圆片外表通过肉眼能发现的弯曲和曲线。Waviness - Widely spaced imperfections on the surface of a wafer.波纹-晶圆片外表经常出现的缺陷。
