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1、New Generation of High Power Semiconductor Closing Switches for Pulsed Power ApplicationsI. Introduction Solid state semiconductor switches are very inviting to use at pulsed power systems because these switches have high reliability, long lifetime, low costs during using, and environmental safety d
2、ue to mercury and lead are absent. Semiconductor switches are able to work in any position, so, it is possible to design systems as for stationary laboratory using, and for mobile using. Therefore these switches are frequently regarded as replacement of gas-discharge devices ignitrons, thyratrons, s
3、park gaps and vacuum switches that generally use now in high-power electrophysical systems including power lasers.Traditional thyristors (SCR) are semiconductor switches mostly using for pulse devices. SCR has small value of forward voltage drop at switch-on state, it has high overload capacity for
4、current, and at last it has relatively low cost value due to the simple bipolar technology. Disadvantage of SCR is observed at switching of current pulses with very high peak value and short duration. Reason of this disadvantage is sufficiently slow process of switch-on state expansion from triggeri
5、ng electrode to external border of p-n junction after triggering pulse applying. This SCR feature is defined SCR using into millisecond range of current switching. Improvement of SCR pulse characteristics can be reached by using of the distributed gate design. This is allowed to decrease the time of
6、 total switch-on and greatly improve SCR switching capacity. Thus, ABB company is expanded the semiconductor switch using up to microsecond range by design of special pulse asymmetric thyristors (ASCR). These devices have distributing gate structure like a GTO. This thyristor design and forced trigg
7、ering mode are obtained the high switching capacity of thyristor (=150kA, =50s, di/dt = 18kA/s, single pulse). However, in this design gate structure is covered large active area of thyristor (more than 50%) that decrease the efficiency of Si using and increase cost of device.Si-thyristors and IGBT
8、have demonstrated high switching characteristics at repetitive mode. However, such devices do not intend for switching of high pulse currents (tens of kiloamperes and more) because of well-known physical limits are existed such as low doping of emitters, short lifetime of minority carriers, small si
9、zes of chips etc.Our investigation have obtained that switches based on reverse switched dinistors are more perspective solid-state switches to switch super high powers at microsecond and submillisecond ranges. Reverse switched dinistors (RSD) is two-electrode analogue of reverse conducting thyristo
10、r with monolithical integrated freewheeling diode in Si. This diode is connected in parallel and in the back direction to the thyristor part of RSD. Triggering of RSD is provided by short pulse of trigger current at brief applying of reversal voltage to RSD. Design of RSD is made thus that triggerin
11、g current passes through diode areas of RSD quasiaxially and uniformly along the Si structure area. This current produces the oncoming injection of charge carriers from both emitter junctions to base regions and initiates the regenerative process of switch-on for RSD thyristor areas. Such method of
12、triggering for this special design of Si plate is provided total and uniform switching of RSD along all active area in the very short time like as diode switch-on. The freewheeling diode integrated into the RSD structure could be used as damping diode at fault mode in the discharge circuit. This fau
13、lt mode such as breakdown of cable lines can lead to oscillating current through switch.It has been experimentally obtained in that semiconductor switches based on RSD can work successfully in the pulsed power systems to drive flash lamps pumping high-power neodymium lasers. It was shown in that RSD
14、-switches based on RSD wafer diameter of 63 mm (switch type KRD-25-100) and RSD-switches based on RSD wafer diameter of 76 mm (switch type KRD-25-180) can switch the current pulses with submillisecond duration and peak value of 120 kA and 180 kA respectively. Three switches (switch type KRD 25-180)
15、connected in parallel were successfully tested under the following mode: operating voltage = 25 kV, operating current Ip = 470 kA, and transferred charge Q = 145 Coulombs.During 2000 2001, the capacitor bank for neodymium laser of facility LUCH was built at RFNC-VNIIEF. This bank including 18 switch
16、es type KRD-25-100 operates successfully during 5 years without any failures of switches.This report is submitted results of development of new generation of solid state switches having low losses of power and high-current switching capacity.II. Development of RSDs next generation The technology of
17、fabrication of new RSD structure has been developed to increase the switching capacity. This new structure is SPT (Soft Punch Through)-structure - with “soft” closing of space-charge region into buffer n-layer.Decreasing of n-base thickness and also improving of RSD switch-on uniformity by good spre
18、ading of charge carriers on the n-layer at voltage inversion are provided decreasing of all components of losses energy such as losses at triggering, losses at transient process of switch-on, and losses at state-on. Our preliminary estimation was shown that such structure must provide the increasing
19、 of operating peak current through RSD approximately in 1.5 times.Investigations were carried out for RSD with blocking voltage of 2.4 kV and Si waferdiameters of 63, 76, and 100 mm by special test station. The main goal of these investigations is definition of maximum permissible level of peak curr
20、ent passing through single RSD with given area. Current passing through RSD and voltage drop on RSD structure during current passing are measured at testing. In Fig.1 waveforms of peak currents and voltage drops is shown for RSD with size of 76 mm and blocking voltage of 2.4 kV.Fig.1. Waveforms of p
21、ulse current (a) and voltage drop (b) for RSD with wafer size of 76 mm and blocking voltage of 2.4 kVIn according with study program current was slowly increased until maximum permissible level Ipm. When this level was reached the sharp rise of voltage and than the same sharp decay of voltage for cu
22、rve U(t) was observed. Reason of voltage rise is strong decreasing of carrier mobility at high temperature, and reason of voltage decay is quick modulation of channel conductivity by thermal generated plasma that is appeared in accordance with sharp exponential dependence for own concentration of in
23、itial silicon into base areas of RSD at temperature of 400 C.Tests were shown that this sharp rise of voltage at maximum permissible current does not lead to immediate fault of RSD. RSD keeps its blocking characteristic. However, after passing of such current we can observe the appearance of erosion
24、 from cathode for aluminum metallization of RSD contacts, and this fact is evidence of borderline state of device. The subsequent increasing of current (more than ) leads to fusing of Si structure. Therefore, level Ipm is the reference position to define the value of operation peak current for RSD-s
25、witch under long and repeated many times operating mode. We have determined that operating peak current must be less than 80% from level . This ratio was confirmed by calculations and results of tests under mode (several thousands of shots). Data of test results for new generation of RSD with the va
26、rious diameter of Si wafer are shown in Table 1. In this Table for comparing results of the same tests for the first generation of RSD with size of 63 and 76 mm are shown. III. Switches based on RSD of new generation New reverse switched dinistors is manufactured in two variants. RSD of the first va
27、riant is in the low-profile metal-ceramic housing. The second variant is RSD fabricated without housing and with additional protection of periphery area from external action.Dinistors placed into housing can be used for work under as mono - pulse mode and repeated - pulse mode. If repeated-pulsed mo
28、de using the forced cooling of semiconductor devices and using of heatsinks to both side of pellet must be made. Dinistors without housing connects in series, and such assembly could be placed into a single compact housing. However, such assembly can work under mono-pulse mode only.Operating voltage
29、 for switch typically exceeds blocking voltage of single RSD (2400V), thus switch is included several RSDs connected in series. Fig.2. Reverse switched dinistors for peak current from 200 kA to 500 kA and blocking voltage of 2400 V, encapsullated in hermetic metal ceramic housing and without housing
30、 (RSD sizes of 64, 76, and 100 mm).Number of RSDs included in assembly depends on operating voltage of switch. Therefore, technical problem of switch development is mainly optimization of design for assembly of several dinistors connected in series. A lot of special investigations have carried out s
31、uch as choice of optimum materials to provide best contacts between RSDs, calculation of dynamic forces to clamp assembly, etc. These investigations are provided small and stable transition electrical and thermal resistances between RSDs that guarantees long and reliable performance of switch. Espec
32、ial computer technique has developed to select RSDs for connection in series. At this RSD selection value of leakage current and stability of blocking volt-amps diagram are measured especially. This selection technique is allowed exclude the voltage dividers using for equalization of static voltage
33、for each RSD at assembly. Thus, after such selection switch design can simplify, sizes of switch are increased approximately in 1.5 times, and cost of switch is increased too.This solid state switch has operating voltage of up to 25 kVdc, operating peak current of up to 300 kA at current pulse durat
34、ion of up to 500 s. RFNC-VNIIEF plans to use such switch at capacitor bank of laser facility “Iskra-6”. This switch is included 15 RSDs with size of 76 mm and blocking voltage of 2.4 kV connected in series and encapsullated into dielectric housing. Very high level of switched power density per volum
35、e unit has reached by this switch design. This value is of 2.5 W/, and this value is exceeded in the several times the same switches based on pulse thyristors.Triggering of all RSDs in switch is provided by the single trigger generator which connected to switch in parallel. Triggering current passes
36、 simultaneously through all RSDs connected in series. Such triggering type is allowed to increase efficiency and reliability of triggering circuit for this switch, and this is one more advantage of RSD switch compared to switch based on thyristors.For new generation of RSD trigger current has peak v
37、alue between 1-1.5 kA at pulse duration between 1.5 2 s. These values are less in 2-3 times compared to values of trigger current for RSD of the first generation.IV. Conclusion Next generation of reverse-switched dinistors and RSD switches has been developed Tests of these switches are shown that al
38、l time high level of switched power density per volume unit has reached. The switches are able to work under as mono-pulse and pulse-repeated modes and suitable for many applications of pulsed power.应用于脉冲电源设备的新一代高功率半导体关闭开关1 导言 Solid state semiconductor switches are very固态半导体开关普遍使用在脉冲功率系统，因为these swi
39、tches have high reliability, long lifetime,这些开关具有可靠性高，寿命长， low costs during using, and environmental safety使用成本低，并且due to mercury and lead are absent.由于汞和铅的量少能够保证环境的安全。Semiconductor半导体switches are able to work in any position, so, it is开关可以在任何位置工作，所以，它可以possible to design systems as for stationary在固
40、定的laboratory using, and for mobile using.实验室使用，并可以为移动设备设计系统。Therefore因此these switches are frequently regarded as这些开关被频繁的看作是可以替代replacement of gas-discharge devices ignitrons,气体放电装置、放电管、thyratrons, spark gaps and vacuum switches that闸流管，火花隙缝隙和现在普遍使用的高能量电板systems including power lasers.系统包括功率激光器的真空开关g
41、enerally use now in high-power electrophysical。Traditional传统的thyristors晶闸管(SCR)（()da are()是semiconductor switches mostly using for pulse大多应用在脉冲devices.设备的半导体开关。它在早前的SCR has small value of forward voltage正向电压drop at switch-on state, it has high overload下拉开关的状态有小的价值，它对电流具有超负荷的能力，最后它由于简单的两极技术它拥有相对较低的co
42、st value due to the simple bipolar technology.成本价值。Disadvantage of SCR is observed at switching of它的缺点是高峰值的current pulses with very high peak value and short电流脉冲和duration.较短的持续时间。导致这种缺点的原因是在触发脉冲设置后从触发电极到到外部连接进程十分缓慢triggering electrode to external border of pn。This SCR。它的这种特征使得它应用在现时配电的毫秒范围内。改进晶闸管脉冲的
43、特点可以通过改进分布式门设计达到效果。这就允许减少这就允许这the time of total switch-on and greatly improve总的接通时间和极大提高配电的能力。Thus, ABB company isThus, ABB company is因此，ABB公司扩大半导体开关的使用一直到对特别脉冲的不均匀asymmetric thyristors (ASCR) 1.晶闸管的微秒范围的设计。这些装置分布闸门的结构类似于GTOGTO。This这个thyristor design and forced triggering mode are晶闸管的设计和强迫的触发模式obtai
44、ned the high switching capacity of thyristor获得晶闸管的高配电能力(I。However, in this design gate structure is covered然而，这个门的结构覆盖large active area of thyristor (more than 50%) that了晶闸管的大活动面积decrease the efficiency of Si using and increase cost，从而降低了硅利用的效率并增加了装置的成本。Si-thyristors and IGBT have demonstrated硅晶闸管和I
45、GBT已经证明在重复模式下的high switching characteristics at repetitive mode高配电特性2,3.。However, such devices do not intend for然而，这样的设备因为众所周知的屋里限制不打算供给switching of high pulse currents (tens of kiloamperes高脉冲电流的配电普遍存在and more) because of well-known physical limits are，如存在使用兴奋剂的排放低， of minority carriers, small sizes
46、 of chips etc.少数载流子的载波寿命短，小尺寸的芯片等。Our investigation have obtained that我们的调查已取得的switches based on reverse switched dinistors 4基于逆向的接通在毫秒和微妙范围内接通显现为从使用电晶体管转换为接通高能量开关。Reverse switched dinistors逆向在硅里的综合的单片电路惯性滑行的二极管逆向的晶闸管conducting thyristor with monolithical integrated的的(RSD) is two-electrode analogue
47、of reverse是两极类似物。这个二极管平行的连接，在后方与RSD的晶闸管部分连接。Triggering of RSD is provided by short触发RSD为提供短期pulse of trigger current at brief applying of reversal触发脉冲电流简短逆转的应用voltage to RSD.电压区。RSD的设计触发电流通过二极管领域的相对标准偏差quasiaxially and uniformly along the Si structure和均匀沿着硅的area.结构范围。目前生产的这即将来临的电荷携带者的生产过程从发射连接到基本区域和
48、启动再生过程开关上的RSD为晶闸管地区。Such method of这种提供RSD开关的总和或统一的设置对于硅的特别设计的触发方法在非常少的时间应用在所有的活动面积类似二极管的接通。The freewheeling diode integrated into该惯性滑行的二极管集成到RSD结构可以作为阻尼二极管在fault mode in the discharge circuit.故障模式的放电电路。这种故障模式such as breakdown of cable lines can lead to如故障的电缆线可能会导致oscillating current through switch.振
49、荡电流开关通过。It has been experimentally obtained in 它已获得的RSD为基础的实验半导体开关can work successfully in the pulsed power systems可以成功地在脉冲功率系统to drive flash lamps pumping high-power内内推动闪存灯泵浦高功率的neodymium lasers.得得钕激光。结果表明在该区域市交换机基于RSD为晶圆直径六三毫米和RSD开关的on RSD wafer diameter of 76 mm (switch type关于区晶圆直径为76毫米可以切换当前的脉冲submillisecond duration and peak value of 120 kA持续时间和峰值。三个开关并联successfully tested under the following mode:成功试射以下模式：经营电压= 25 kV, ope
