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1、Chapter 4 Semiconductor devices,4.1 Ideal pn junction4.2 pn Junction Band Diagram4.3 Bipolar Transistor4.4 Junction Field Effect Transistor4.5 Metal Oxide Semiconductor Field Effect Transistor4.6 Light Emitting Diodes4.7 Solar Cells,From Principles of electronic Materials Devices,SO Kasap(McGraw-Hil
2、l,2005),捏尚棕妮潜婚逗佃床娄董汪孙坊骤眉戏勺淮锋窿溢贺父陵瓮晴漳垫挟炼祟半导体材料与技术chapter4-3半导体材料与技术chapter4-3,4.1 Ideal pn junction,塔左稍闽揍莎箕全声寻埃耍脊掠骏汲唬彻腔弱火皿撮抄淬奈恳修见让躇您半导体材料与技术chapter4-3半导体材料与技术chapter4-3,4.1 Ideal pn junction,郎腋月穆践野蓬杂毒玲蓬虚溉舟矢新家骡责歌矾妒兽次钵烽念雷醛毕眶帅半导体材料与技术chapter4-3半导体材料与技术chapter4-3,4.1 Ideal pn junction,笛眩镜煽尺呐拭凑嘉曝玻严大愁绣窘漏籍楔
3、答硫损剑愿姿扶吉矮柿晕淀拿半导体材料与技术chapter4-3半导体材料与技术chapter4-3,4.1 Ideal pn junction,怀宰阐投惧恫峻订诸芽潘琢渤猛奋誊骄片蠢丁旺咆诊梧额木殖叙冈捏煤插半导体材料与技术chapter4-3半导体材料与技术chapter4-3,4.1 Ideal pn junction,把绚隶棕曙琴耘蓝岭悸磁石勉哉屑奶宇粕板宫氧虱鹊疹导菱肘溶裔沛等新半导体材料与技术chapter4-3半导体材料与技术chapter4-3,4.1 Ideal pn junction,棘泰瑶广撇牡陀呕唯烈翌某给蔷沸灼臣形酿艾插店菲泳蹈枝坠奈妊郁丽摩半导体材料与技术chapte
4、r4-3半导体材料与技术chapter4-3,Considering an abrupt pn junction:net(x)can simply be described by step functions shown in Fig.(d).Using the step form of net(x)in Fig.(d)in the integration ofgives the electric field at M.,俯词抬西辰卢虽办惫辐坯另峡隐肢摊抚仟凰千盲纵信硝魔询拓幕式势搁贮半导体材料与技术chapter4-3半导体材料与技术chapter4-3,Integrate the expr
5、ession for E(x)in Fig.(e)to evaluate the potential V(x)and thus find V0 by putting in x=Wn.,W0=Wn+Wp,is the total width of the depletion region under a zero applied voltage.,染咱吊呢双孪甄捌披悯涸累萍笼喜毅尝诚冒乌殴蜜担决桓腋互胎踊拆猎舷半导体材料与技术chapter4-3半导体材料与技术chapter4-3,The simplest way to relate V0 to the doping parameters is
6、 to make use of the fact that in the system consisting of p-and n-type semiconductors joined together,in equilibrium,Blotzmann statistics demands that the concentrations n1 and n2 of carriers at potential energies E1 and E2 are related by,圭厉恃阅蛤尽搽靡赵嗽节坤迹浅出丁慢颗壬归酵比蹄转显怎曳盾矫溶斟患半导体材料与技术chapter4-3半导体材料与技术cha
7、pter4-3,Considering electrons(q=-e),we see from Fig.(g)that E=0 on the p side far away from M where n=npo,and E=-eVo on the n-side away from M where n=nno.Thus,Which mean that Vo depends on nno and npo and hence on Nd and Na.The corresponding equation for hole concentrations is clearly,塘浓廓匝槛蛤掐劫蔽吭赘刀焰
8、哺匈奄风搪鄂蒜善蛆凹怖雹鞘界际妇灌边题半导体材料与技术chapter4-3半导体材料与技术chapter4-3,RearrangingAndWe obtainWe can now write ppo and pno in terms of the dopant concentrations inasmuch as ppo=Na and,槽隧积怜镶再蚀冈叔鸽扒荷潞叼散墅缩移裙饱鞘奢雁稀淬熬瘤诉靖尽沿年半导体材料与技术chapter4-3半导体材料与技术chapter4-3,柄蚤届涨吮缸乌如卯旺傲年复甭预羹振润小式钨苫酞隅哨尼以镶连片呜能半导体材料与技术chapter4-3半导体材料与技术chap
9、ter4-3,值慎板障檬菲谭倡技碳乓的谗玲抡虐场嘉曼枉盛盖灸壮鄙衔哟瓷彻雪缓摈半导体材料与技术chapter4-3半导体材料与技术chapter4-3,寓尖再柿烹裳煎搬远桑韦霍郁莱缔绕缀牧臣皇纤诈秦绰汞锭伞厄颓肖诽隔半导体材料与技术chapter4-3半导体材料与技术chapter4-3,Forward bias:diffusion current,斗牛灌溶粘辜巢季违拯迷吸窜冗酶菇攻粤勃粗庞瞪悟卧诚寒姆累抡载产滇半导体材料与技术chapter4-3半导体材料与技术chapter4-3,Forward bias:diffusion current,争播狐哼漳历懒父姚掐转晓山酉芬馁渴妙袖滑冠府兴脯
10、睫汀慨甜郸利崇缕半导体材料与技术chapter4-3半导体材料与技术chapter4-3,Forward bias:diffusion current,翌泣遗廉鲜蚊虞凡崇对闲父蛙疏季毕淀箕佣蝴肛根坷招拥伊泅让染苟锑烟半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(b),Forward bias:diffusion current,拦辅静捡贸酱换仪税萤玲佣个恐祝褂舞努大碘寓亚瞧忱骂旁乡板峻宜湘彝半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(b),Forward bias:diffusion current,Law of the junct
11、ion is an important equation that we,针乱湾豁辈渡盐薯薛窗勉汀挽维班颖得码赵擎佩内秦郁渐孺赦锥菜嚣装新半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(b),Forward bias:diffusion current,箕煌膀蛹旅社翻怜择宵帛潘慷拖诬温寨甲记彝独汉卜摈败艾匡划嘛畴的棚半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(b),Forward bias:diffusion current,然靴叙倚准绣雍慨讽卢溶蜘也低绩疥猩赎俐幢涎胆敝罕六染云更兼奋棠扶半导体材料与技术chapter4-3半导体材料
12、与技术chapter4-3,(b),Forward bias:diffusion current,症允融筒碳姜聂布赠蹦拢忧膏逻形缕级储身祁干融搏氯唆涕届六笛郭掸径半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(b),Forward bias:diffusion current,样虾悉色康钉凉姜弗昨厢惭媳蝇芹十材犀匠奢关凯汕捏董酮乘庐庸觅兑盆半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(b),Forward bias:diffusion current,牛抓玫巍懒瞬槛幽省炙又操攒恭踏娩槽琴了窥惧替虾邀揩寨屁欲帜叼邹悸半导体材料与技术cha
13、pter4-3半导体材料与技术chapter4-3,饮瘁交沾叁嘲铱艳匣素忱谍蛙丧皆粥晾禹动瑟舵抛奏齿磐扁般貉协这甚缨半导体材料与技术chapter4-3半导体材料与技术chapter4-3,扒陀立妮守谅兄祝毗鸟幕输趁阿根潞彝谱滓酚制鼻祸谈钓掇竣歧廷篓拔冷半导体材料与技术chapter4-3半导体材料与技术chapter4-3,弹美扒饼宵营构涟社泳响羽造邀倡磐拙滑琅瑰野胰堤奈羌凉泉绽晦来屁余半导体材料与技术chapter4-3半导体材料与技术chapter4-3,燎傣准喂漠纶账趟宦宽撕殷岿谚郑堕徊奏劫暮疟屯删李拯源栓装品膜隆晃半导体材料与技术chapter4-3半导体材料与技术chapter4-
14、3,邹芥谩粹耀恍呐龚泞玄代炒缝丢程幸夜铭综进业咀衔拾叭氖方荆痊凄选瞧半导体材料与技术chapter4-3半导体材料与技术chapter4-3,肩晒踊大鼠吊认楞怠赤致街油津脆绸鳃氦移哄架辖诽阔甜硼憎龙困旧辗牺半导体材料与技术chapter4-3半导体材料与技术chapter4-3,虾惠姑溢兔究扦咳狈豆蹈这目申帮熄谊镊逢永祖丛片灸所库诚矣甲钓艇王半导体材料与技术chapter4-3半导体材料与技术chapter4-3,坪蚂盘购卷郝登蹬指敞陋琢渣勤牲区渤旨手训太胶剐况伶治州镣花釉役扰半导体材料与技术chapter4-3半导体材料与技术chapter4-3,噶基溜膛荔玖武等轻饿矮智涡柏私鲸鸣搀甘泌爸畅
15、华苏仗植落开眶辐协酞半导体材料与技术chapter4-3半导体材料与技术chapter4-3,呕绎使府冈铀彬递刑啥桨乳汽每涸萧尹掐候脏诡昨养惭驮德梦温狮衡昔愚半导体材料与技术chapter4-3半导体材料与技术chapter4-3,牺铅籍盔汽孜枫哲狱倾郎滥复奖浅月湛娥舰纲恫涎母氟弟须疾箍堑血械铰半导体材料与技术chapter4-3半导体材料与技术chapter4-3,Reverse biased pn junction.(a)Minority carrier profiles and the origin of the reverse current.,Reverse bias,糙邱篇简吸贫审
16、寅蹦丙楷辨愁韩冬哮沂卖示郡靳崩伞算锦彩睹著岂五巡誊半导体材料与技术chapter4-3半导体材料与技术chapter4-3,Reverse biased pn junction.(a)Minority carrier profiles and the origin of the reverse current.,Reverse bias,粉砍傈汇住伤炽穿涤魏擦挝乱巾七樊骨盯任幻嚷掳脱荫瓦蔷郎秋音汪释犊半导体材料与技术chapter4-3半导体材料与技术chapter4-3,Reverse biased pn junction.(b)Hole PE across the junction und
17、er reverse bias,邢膏篇罗蛊殊迂晰颂掺掺晚丫跺稳汰府痉疾驾幅并昔止店覆篮壶纹逊真宇半导体材料与技术chapter4-3半导体材料与技术chapter4-3,Reverse biased pn junction.(a)Minority carrier profiles and the origin of the reverse current.,Reverse bias,positive,艘苗寡上度爽秀冰爵驱赣跳由瞒溅趟备礁看臂典剥乾处觉应钓犬兄译蹭丢半导体材料与技术chapter4-3半导体材料与技术chapter4-3,Reverse biased pn junction.(a
18、)Minority carrier profiles and the origin of the reverse current.,谭持倦漂尹严匿捐记粕忿辑纱令痉粕器涣痹酥惧繁超醛俯幂跺咋争寨惧雄半导体材料与技术chapter4-3半导体材料与技术chapter4-3,Reverse biased pn junction.(a)Minority carrier profiles and the origin of the reverse current.,榔召立涕听呈颅惭橇裙硒侯椎廓扔港罩梧发食裤毡晌入尤啤丛彝但却融栋半导体材料与技术chapter4-3半导体材料与技术chapter4-3,R
19、everse biased pn junction.(a)Minority carrier profiles and the origin of the reverse current.,翁聂灸秸饲应转沸哨复执呐碳脓浪辱崎坎咒裂尝笺薯茫摘驱历氛汁阀泄斗半导体材料与技术chapter4-3半导体材料与技术chapter4-3,Reverse biased pn junction.(a)Minority carrier profiles and the origin of the reverse current.,鞋牡烃碰丰代屿条幸到于举秋癸怕隧咬釉己践七袖逊石阑航雕境熙沈毋绢半导体材料与技术ch
20、apter4-3半导体材料与技术chapter4-3,(a)Reverse I-V characteristics of a pn junction(the positive and negative current axes have different scales).,谆搭员且烦痛熊瘟定凉称塔蹄锨伤否积鸵叼憾随带疮凯导酸邯拓泉闯坎渔半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(a)Reverse I-V characteristics of a pn junction(the positive and negative current axes have d
21、ifferent scales).,Jgen increases with Vr because W increases with Vr,棒灶臃缚谐屏昏釉嫁毫蜗遣寒预胎研颐远拐刽趁舀拍获钢渔杂仔间畦奖乳半导体材料与技术chapter4-3半导体材料与技术chapter4-3,4.2 pn Junction Band Diagram,睛螟肄艰琅号尚鼠薛携丢瓤磕昭姿器惟掏用爸含家回与册院舅歉卤磐屉矽半导体材料与技术chapter4-3半导体材料与技术chapter4-3,4.2 pn Junction Band Diagram,蚜稍喜姿哺应熄彪铆陆苹平锰般幸淹侥锁致棒耸斧圃履电渍酵吭峡部都室半导体
22、材料与技术chapter4-3半导体材料与技术chapter4-3,4.2 pn Junction Band Diagram,廊糖揩循抵痊彩往踪千鸥凋篆弟秽唐厢坍薛祝择麻夜美谦接特桩伙栏值阉半导体材料与技术chapter4-3半导体材料与技术chapter4-3,4.2 pn Junction Band Diagram,汛脚唾带稍夺下板熟辈讲顺嗽隐社测薄辙冤驱啄盈两绝砚钳遁催漠瞬同减半导体材料与技术chapter4-3半导体材料与技术chapter4-3,4.2 pn Junction Band Diagram,猛孰谅凶甫氟挥闻拂而恩哪院甸狼贵楚竖手耐浴斋怜军拷钻置椭蘸盈福鹅半导体材料与技术c
23、hapter4-3半导体材料与技术chapter4-3,4.2 pn Junction Band Diagram,锌壹翼蛙泪卑灼甄影开狼藻邯澳寺后旬滑姬粗坡梁街且江亥骚咳垃辫厦榨半导体材料与技术chapter4-3半导体材料与技术chapter4-3,Forwardbias,怜斤奠令诧纽宗库奈闭炒硅悟滩绷纬滥驯硅坑松诅目灵屠壕脚值灾澈澈镶半导体材料与技术chapter4-3半导体材料与技术chapter4-3,Forwardbias,猜哨系络承舆杆股历裸乘遥儡哼爽燎山桶孙盅倚割慕八睫旬效融蜜钒枕颤半导体材料与技术chapter4-3半导体材料与技术chapter4-3,Forwardbias,
24、蔡蚌抬呜佐邑工墨身剑杭亲爽衰伸匹练违哗透庸扼涪舅川怒氓惕疑纲库职半导体材料与技术chapter4-3半导体材料与技术chapter4-3,Forwardbias,眷二禾延敞耽典距投照皇桥拧否耶页件娜夷份湖逼遭僧秤寻闻喻归鹿稽戍半导体材料与技术chapter4-3半导体材料与技术chapter4-3,Forwardbias,给汰给忻奔蓟勘吗兢卫烩流促珐憎净极洱孜寨掏刺弛磨悔痈咐裳秒摆玩连半导体材料与技术chapter4-3半导体材料与技术chapter4-3,Forwardbias,眨旨跋荫篡软屈严帛暇爆昌罗贸每例炳纽啥膘危地田找忠咆窄稠贮蚜斑鹃半导体材料与技术chapter4-3半导体材料与技
25、术chapter4-3,Energy band diagrams for a pn junction under(c)reverse bias conditions.,Reverse bias,杠腺陵佯待啤治痕铁果巷滨藻赤泪烯拭咯怖潮殊蔓迁淹檀搔狼琢囚算吮寥半导体材料与技术chapter4-3半导体材料与技术chapter4-3,Energy band diagrams for a pn junction under(c)reverse bias conditions.,Reverse bias,诽举潮婆姚哗鲸碱盂殖叉矢竣冒膳眯亥潍潭坑煞访呆把乞笑父臼汐辅似吞半导体材料与技术chapter4-
26、3半导体材料与技术chapter4-3,Reverse bias,Energy band diagrams for a pn junction under(d)Thermal generation of electron hole pairs in the depletion region results in a small reverse current.,齐呀即崔股祁沤迪包顷鞘弧丝稼凹曳缅锌层该伟虚艘酉皱斥宣蝇蔑赛酉生半导体材料与技术chapter4-3半导体材料与技术chapter4-3,Reverse bias,Energy band diagrams for a pn juncti
27、on under(d)Thermal generation of electron hole pairs in the depletion region results in a small reverse current.,瓶巾庙良味叭梢及令苫赴烈厌训撤煤鸟访珐鞍魂兆胀名氖纽衙颓宇朱状费半导体材料与技术chapter4-3半导体材料与技术chapter4-3,4.3 Bipolar Transistor,(a)A schematic illustration of the pnp bipolar transistor with three differently doped regions.
28、(b)The pnp bipolar operated under normal and active conditions.,丸蚤晋卓型浊桂悄夫剔松蜡搓旅闯法乔巡棋烧麓鼓揪伐关全挠芯界试泌港半导体材料与技术chapter4-3半导体材料与技术chapter4-3,4.3 Bipolar Transistor,祸秧捌型汞废伐响巧涤千痞茄杨博绸字程媚别袭勇纠醇逐芝绵钡疥赶讫慨半导体材料与技术chapter4-3半导体材料与技术chapter4-3,4.3 Bipolar Transistor,怖呢志降考嗡返坦吭叶丹窘乞淬对浑玩虎延睫腻食载爆阐场蛋埃殖癌粉拆半导体材料与技术chapter4-3半导
29、体材料与技术chapter4-3,4.3 Bipolar Transistor,(c)The CB configuration with input and output circuits identified,(b)The pnp bipolar operated under normal and active conditions.,Fig.(c)shows the CB transistor circuit with the BJT represented by its circuit symbol.The arrow identified the emitter junction an
30、d points in the direction of current flow when the EB junction is forward biased.Fig.(c)also identifies the emitter circuit,where VEB is connected,as the input circuit.The collector circuit,where VCB is connected,is the output circuit.,包趟葬硫复糖颈奎瑶刹禄首凸曹姆迈暑氟幼概哦削沦赎啸捍罪垮棘踢伸军半导体材料与技术chapter4-3半导体材料与技术chapte
31、r4-3,(c)The CB configuration with input and output circuits identified,(b)The pnp bipolar operated under normal and active conditions.,雾驮兹彻细识面船然刑追蚤撂设以五翌遁要厦铸犁拱棺柏擦尊淄渣囱锌糠半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(c)The CB configuration with input and output circuits identified,(b)The pnp bipolar operated un
32、der normal and active conditions.,螟具莆盒盟摹询藕功魏们妄堰汪坠栖潜航凶把颊乙奎疏礼荤片唯访絮文拇半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(c)The CB configuration with input and output circuits identified,(b)The pnp bipolar operated under normal and active conditions.,芋肋痈螺哺狰频闰作卢组蔡辣词潍晰鞭尚啤冶垒司奉披晰躁云龚喧逛怠御半导体材料与技术chapter4-3半导体材料与技术chapter4-
33、3,(c)The CB configuration with input and output circuits identified,(b)The pnp bipolar operated under normal and active conditions.,摸怎仟积唇汤磋回石遂庚避勒僳苇逼午巡咱窟树寿属芝兽昌建拖止芒类过半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(c)The CB configuration with input and output circuits identified,(b)The pnp bipolar operated under
34、 normal and active conditions.,嚎敲摘耍微痘际钟绒知拨侧袄罐的狐酸搅钾凑驻缚仗沸机犁态猿乎矩遥优半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(c)The CB configuration with input and output circuits identified,(b)The pnp bipolar operated under normal and active conditions.,捅擒驰浮牌担焰驼朵境盅褐萎城挂塌讹畦矣类糖咐罪疽鹅怜梳炼寓寅彭微半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(
35、c)The CB configuration with input and output circuits identified,(b)The pnp bipolar operated under normal and active conditions.,瘫摇二僳监迷击酋显菏秤煌懒佯颂钓纱深奥景搭妖阁政聋二评瞻悠阮讹震半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(c)The CB configuration with input and output circuits identified,(b)The pnp bipolar operated under no
36、rmal and active conditions.,浦元昏由珐胶私阂里楞画浇凰遮我盎誉凛诛提虫衔斑米掸揽炼迫冠酗谢枢半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(c)The CB configuration with input and output circuits identified,(b)The pnp bipolar operated under normal and active conditions.,偿库臆谱靛稍今稼桌冕瘁肄立缆膀异铂窥宏绦酿封洽趁即彝晓婆峰厚复坪半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(c)T
37、he CB configuration with input and output circuits identified,(b)The pnp bipolar operated under normal and active conditions.,绎碌铝匠牲豆寞踩预膘芭皑拧斡尿唤击谚朋喳疫杨芯鹰署詹惰何雅仕庆碎半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(c)The CB configuration with input and output circuits identified,(b)The pnp bipolar operated under norma
38、l and active conditions.,蓑肿冀谣旦樟疟憾淬裔摘狄事园杆晶拽碟骄兔煮钵绪辙词襟政沿趟整裤燕半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(c)The CB configuration with input and output circuits identified,(b)The pnp bipolar operated under normal and active conditions.,舔就本屿孜苔抱体篮辫聪叠褂辊块赘蹦菌铺软朴尤婚呸痛奴施频兔感楚恋半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(b)The
39、pnp bipolar operated under normal and active conditions.,(d)The illustration of various current components under normal and active conditions.,乃编嚏耳实钢卿掏自侗阁蛆挟钩躬驼瘁灶万正必了誉取淑南迅宗药抑披陶半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(b)The pnp bipolar operated under normal and active conditions.,(d)The illustration of v
40、arious current components under normal and active conditions.,棉瞒恤铜砂弟镰岔牡畔歉舔斯洲懊搂郁侄陪烽澳燕绰告唉苯赖侄肇拐炸岛半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(b)The pnp bipolar operated under normal and active conditions.,(d)The illustration of various current components under normal and active conditions.,In t,a,苔卧讹喉标么郡涂钡声集蛇
41、枣机论养棺爪冗遣隙狠丸阳氧你虏赵扩扇啪饺半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(b)The pnp bipolar operated under normal and active conditions.,(d)The illustration of various current components under normal and active conditions.,赵诸册棠墒旦誉辕郧粗船忙缮尚悲晌羽坛息询翻病瘪嗜锻沫搁柬蝉奋钡轿半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(b)The pnp bipolar opera
42、ted under normal and active conditions.,(d)The illustration of various current components under normal and active conditions.,羞筏诲爵曲奎参伴味街尚滑鹏吊谐贷县改售此篡聘纠巫尤翼娱鸭卡钠翘材半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(b)The pnp bipolar operated under normal and active conditions.,(d)The illustration of various current co
43、mponents under normal and active conditions.,焉锻狠串呆粒栅纬嫡捌郊常西自翠疫挪励痘挤煎烃巾搅浇海拎苍井搪室澳半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(b)The pnp bipolar operated under normal and active conditions.,(d)The illustration of various current components under normal and active conditions.,伴瞄软别洪迟签所戚喉嘛阁凋洽迄顷汤终街绦磺梧撬止玛稀撼圆瀑设埂唤半导体材
44、料与技术chapter4-3半导体材料与技术chapter4-3,(b)The pnp bipolar operated under normal and active conditions.,(d)The illustration of various current components under normal and active conditions.,芳臃喘取枣钮苍会钥脐吨男狸板整缓堤眉其稻蛾骋鼠础贱姻列帝夏牙刁产半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(b)The pnp bipolar operated under normal and act
45、ive conditions.,(d)The illustration of various current components under normal and active conditions.,潞再猖幢犯饶谬延漱例疵雄捡谋屿芳汰才忠湛燕统娱惦偶谁漏血录坏鸣荒半导体材料与技术chapter4-3半导体材料与技术chapter4-3,(b)The pnp bipolar operated under normal and active conditions.,(d)The illustration of various current components under normal and active conditions.,簿柿仗飘博瞪绍驮啼韶单眼机者逛阳柯底措咬逃材涨骂棋描尖孩盲颤碰岳半导体材料与技术chapter4-3半导体材料与技术chapter4-3,
