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1、硫酸銅填孔電鍍理論-有機物質成分,Organic additivesOrganic additive speciesBrightener/acceleratorCarrier/suppressorLeveller,電鍍反應:(摘要)可溶解性陽極,Function 1Reduce the activation energy and increase Cu deposition rateAdditive can be monitored by CVS using standard addition method or Hull Cell,Additive Chemistry,Function 2T
2、he side chains on the additive molecule has a barrier for Cu+to deposit onto the surface.The probability to fill in steps and vacancies on the surface increases.,Additive Chemistry(Cont.),Function 3The coverage of the additive on the surface enhanced nucleation and formation of randomly oriented gra
3、ins.Allows the formation a microstructure with interlocking of randomly oriented grains.,Additive Chemistry(Cont.),Decomposition of additive on Cu surface,such as anode,2S(-1)+2e-2S(-2)Cu Cu2+2e-,Occurred mainly during bath idlingAir bubbling during idling can usually solve the by-product formation
4、issue,Control of additive content,By-product speeds up the Cu deposition at least 20 times,A bath dominated by the by-product gives columnar microstructure,Control of Additive content(Cont.),Additive 濃度對電鍍效率的影響,硫酸銅填孔電鍍:Leveler dominate V.S no Leveler 系統比較,Mechanism of thin knee,Carrier#1,Brightener#1,leveler,Carrier#2,Brightener#2,Competitors,MicroFill,Via Fill deposition mode,Mechanism of viafilling,Normal,Accumulation of BP,填孔藥水之成分及功能-範例介紹,不同電流密度下,Additive,carrier 對電鍍效率的影響,
